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FOD816 Series 4-Pin Phototransistor Optocouplers
July 2005
FOD816 Series 4-Pin Phototransistor Optocouplers
Features
AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 600% minimum Safety agency approvals pending High input-output isolation voltage of 5000Vrms
Applications
Power supply regulators Digital logic inputs Microprocessor inputs
Description
The FOD816 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon photodarlington output in a 4-pin dual in-line package.
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
4
CATHODE, ANODE 2 3 EMITTER
1
Absolute Maximum Ratings (TA = 25C Unless otherwise specified.)
Parameter
TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Power Dissipation INPUT Forward Current Power Dissipation OUTPUT Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation VCEO VECO IC PC 35 6 80 150 V V mA mW IF P 50 70 mA mW TSTG TOPR TSOL PTOT -55 to +125 -30 to +100 260 for 10 sec 200 C C C mW
Symbol
Value
Units
(c)2005 Fairchild Semiconductor Corporation
1
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FOD816 Series Rev. 1.0.3
FOD816 Series 4-Pin Phototransistor Optocouplers
Electrical/Characteristics (TA = 25C Unless otherwise specified.)
Individual Component Characteristics Parameter
INPUT Forward Voltage Terminal Capacitance OUTPUT Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage (VCE = 10 V, IF = 0) (IC = 0.1 mA, IF = 0) (IE = 10 A, IF = 0) ICEO BVCEO BVECO -- 35 6 -- -- -- 1 -- -- A V V (IF = 20 mA) (V = 0, f = 1 kHz) VF Ct -- -- 1.2 50 1.4 250 V pF
Test Conditions
Symbol
Min
Typ
Max
Unit
Transfer Characteristics (TA = 25C Unless otherwise specified.) DC Characteristic
Collector Current Current Transfer Ratio1 Collector-Emitter Saturation Voltage Isolation Resistance Floating Capacitance Cut-Off Frequency Response Time (Rise) Response Time (Fall)
Test Conditions
(IF = 1 mA, VCE = 2 V) (IF = 20 mA, IC = 5 mA) (DC500V 40~60% R.H.) (V = 0, f = 1 MHz) (VCE = 5 V, IC = 2 mA, RL = 100 , -3dB) (VCE = 2 V, IC = 10 mA, RL = 100
Symbol
IC CTR VCE (sat) Riso Cf fC tr tf
Min
6 600 -- 5x1010 -- 1 -- --
Typ
-- -- 0.8 1x1011 0.6 6 60 53
Max
75 7,500 1 -- 1 -- 300 250
Unit
mA % V pF KHz s s
Isolation Characteristics Characteristic
Input-Output Isolation Voltage (note 3) Isolation Resistance Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 min (VI-O = 500 VDC) (VI-O = 0, f = 1 MHz)
Symbol
VISO RISO CISO
Min
5000 5x 1010
Typ
1011 0.6
Max
Units
Vac(rms)
1.0
pf
NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (TA = 25C Unless otherwise specified.)
60 FORWARD CURRENT IF (mA) 50 40 30 20 10 0 -30 COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Collector Power Dissipation vs. Ambient Temperature 200
150
100
50
0 -30 0 25 50 75 100 125 AMBIENT TEMPERATURE TA (C)
100 125 AMBIENT TEMPERATURE TA (C)
0
25
50
75
Fig. 3 Collector-Emitted Saturation Voltage vs. Forward Current 8 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5mA 7mA
Fig. 4 Forward Current vs. Forward Voltage 500
FORWARD CURRENT IF (mA)
7 6 5 4 3 2 1 0 0
30mA
50mA
Ta = 25C 200 100 50 20 10 5 2 1
Ta = 75C 50C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 FORWARD CURRENT IF (mA)
Ic = 0.5mA
1mA 3mA
25C 0C - 25C
0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE VF (V)
CURRENT TRANSFER RATIO CTR ( %)
2000
Fig. 5 Current Transfer Ratio vs. Forward Current 100 VCE = 2V Ta = 25C COLLECTOR CURRENT IC (mA)
Fig. 6 Collector Current vs. Collector-Emitter Voltage Ta = 25C 80 IF = 10 mA Pc(MAX.) 5mA 40 2mA 20 1mA
1600
1200
60
800
400
0 0.1
0.2
0.5
1
2
5
10
0 0
1
2
3
4
5
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Typical Electrical/Optical Characteristic Curves (TA = 25C Unless otherwise specified.)
Fig. 7. Relative Current Transfer Ratio vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 RELATIVE CURRENT TRANSFER RATIO (%)
Fig. 8 Collector-Emitter Saturation Voltage vs. Ambient Temperature
1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 AMBIENT TEMPERATURE TA (C)
IF = 5mA VCE = 2V
100
IF = 20mA IC = 5mA
50
0 -30
0 25 50 75 100 AMBIENT TEMPERATURE TA (C)
COLLECTOR DARK CURRENT ICEO (A)
Fig. 9 Collector Dark Current vs. Ambient Temperature
10-5 500
Fig. 10. Response Time vs. Load Resistance
VCE = 2V 200 IC = 10mA
RESPONSE TIME (s)
tr tf
VCE = 20V
10-6 10-7 10-8 10-9 10-10 10-11 -25
Ta = 25C 100
50 20 10 5 2 1 0.5
td
ts
0 25 50 75 100 AMBIENT TEMPERATURE TA (C)
0.2 0.05
0.1 0.2
0.5
1
2
5
10
LOAD RESISTANCE RL (k)
Fig. 11. Frequency Response
VCE = 2V IC = 2mA Ta = 25C
Test Circuit for Response Time
Vcc Input
RD RL
VOLTAGE GAIN AV (dB)
0
Input Output 10% Output 90% td ts tr tf
-10
RL=10k 1k 100
Test Circuit for Frequency Response Vcc
-20 0.02 0.1 1 10 100 RD RL FREQUENCY f (kHz)
Output
4 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Package Dimensions (Through Hole)
0.312 (7.92) 0.288 (7.32)
Package Dimensions (Surface Mount)
SEATING PLANE
0.157 (4.00) 0.118 (3.00)
SEATING PLANE
0.200 (5.10) 0.161 (4.10)
0.276 (7.00) 0.236 (6.00)
0.200 (5.10) 0.161 (4.10)
0.312 (7.92) 0.288 (7.32) 0.276 (7.00) 0.236 (6.00)
0.157 (4.00) 0.118 (3.00) 0.010 (0.26)
0.130 (3.30) 0.091 (2.30)
0.020 (0.51) TYP
0.051 (1.30) 0.043 (1.10)
0.024 (0.60) 0.004 (0.10)
0.049 (1.25) 0.030 (0.76) 0.412 (10.46) 0.388 (9.86)
0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40)
0.010 (0.26) 0.300 (7.62) typ
0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX
0.110 (2.79) 0.090 (2.29)
Package Dimensions (0.4" Lead Spacing)
0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00)
Footprint Dimensions (Surface Mount)
1.5 1.3
SEATING PLANE
0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 0.110 (2.80) 0.011 (1.80)
0.291 (7.40) 0.252 (6.40)
9
0.010 (0.26)
2.54
NOTE All dimensions are in inches (millimeters)
5 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Ordering Information
Option
S SD W 300 300W 3S 3SD
Order Entry Identifier
.S .SD .W .300 .300W .3S .3SD
Description
Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE Approved VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount VDE Approved, Surface Mount, Tape & Reel
Marking Information
4
5
V X ZZ Y
3
6
816
1
2
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code Two digit work week ranging from `01' to `53' Assembly package code
6 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Carrier Tape Specifications
O1.550.05 P2 P0 1.750.1
F W B0 A0 P1 0.30.05
K0
NOTE
All dimensions are in millimeters
Description
Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Compartment
Symbol
W P0 F P2 P1 A0 B0 K0
Dimensions in mm (inches)
16 0.3 (.63) 4 0.1 (.15) 7.5 0.1 (.295) 2 0.1 (.079) 12 0.1 (.472) 10.45 0.1 (.411) 5.30 0.1 (.209) 4.25 0.1 (.167)
7 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
Lead Free recommended IR Reflow condition
Tp
Temperature (C)
Tsmax
Ramp-down
Tsmin
25C ts (Preheat) Time (sec)
Profile Feature
Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate
Soldering zon
Pb-Sn solder assembly
100C ~ 150C 60 ~ 120 sec 183C 60 ~ 120 sec 240 +0/-5C 6C/sec max.
Lead Free assembly
150C ~ 200C 60 ~120 sec 217C 30 ~ 90 sec 250 +0/-5C 6C/sec max.
Recommended Wave Soldering condition
Profile Feature
Peak temperature (Tp)
For all solder assembly
Max 260C for 10 sec
8 FOD816 Series Rev. 1.0.3
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FOD816 Series 4-Pin Phototransistor Optocouplers
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
9 FOD816 Series Rev. 1.0.3
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